Plenary Lectures
PL-1
Yoshifumi Kato
MIRISE Technologies Corporation
Title : From Wafer to Inverter ; The MIRISE Power Device Journey
PL-2
Michael Krieger
Friedrich-Alexander-Universität Erlangen-Nürnberg
Title : Point Defects in Silicon Carbide (tentative)
PL-3
Rajib Datta
GE Vernova Advanced Research Center
Title : Emerging Applications of Silicon Carbide Power Devices in Medium Voltage Power Conversion (Tentative)
PL-4
Yasunori Tanaka
National Institute of Advanced Industrial Science and Technology
Title : Pioneering Next-Generation Power Devices at AIST (Tentative)
Invited Speakers
Takeshi Okamoto
MIRISE Technologies Corporation, Japan
Title : Development of fast 4H-SiC Bulk Crystal Growth by high-temperature gas-source method
Thomas Kuhr
Wolfspeed, USA
Title : TBA
Noboru Ohtani
Kwansei Gakuin University, Japan
Title : Interactions between point defects/impurities and extended defects during 4H-SiC crystal growth
Takuma Kobayashi
The University of Osaka, Japan
Title : Hydrogen Treatment for Performance and Reliability Improvement in SiC MOS Device
Dallas Morisette
Purdue University, USA
Title : TBA
Naoki Watanabe
Hitachi, Ltd., Japan
Title:Ultra-High-Voltage SiC Bipolar Devices: Empowering the Green Power Grids
Sei-Hyung Ryu
Wolfspeed, USA
Title : High Voltage MOS devices in 4H-SiC: from Lab to Reality
Corinna Martinella
University of Montpellier, France
Title : TBA
Thomas Basler
Chemnitz University of Technology, Germany
Title : Bipolar Degradation in SiC Power Devices: Still an Issue? Recent Findings and Perspectives for Applications and Standardization
Naoya Morioka
Kyoto University, Japan
Title : Spin and Charge in SiC Color Centers for Quantum Technologies