Tutorial Day
A Tutorial Program will be held on Sunday, September 27. It is primarily intended for young researchers (PhD students and postdoctoral researchers) but is open to all participants. The tutorials will be delivered by invited experts and are designed to be accessible to attendees from diverse technical backgrounds. Separate registration and payment are required. Due to limited room capacity, registration may close before September 7 if the maximum number of participants is reached. If capacity permits, onsite registration will be available until the limit is reached. Participants may register through the conference website or at the on-site registration desk.
Lectures
Tsunenobu Kimoto
Kyoto University, Japan
Title : Fundamentals of SiC Power Semiconductors: Material and Device Physics
SiC power devices have gained increasing attention and widely been adopted in numerous power conversion systems. In this Tutorial Lecture, an overview of SiC material and device physics is presented. The major topics in this Lecture include updated physical properties, fundamentals of bulk and epitaxial growth, extended and point defects, ion implantation, MOS physics, and contacts. In particular, defect characterization and its reduction, MOS interface, carrier trapping and transport in SiC MOSFETs are highlighted.
Ulrike Grossner
ETH Zürich, Switzerland
Title : Defect Analysis and Radiation Hardness of SiC (Tentative)
Peter Friedrichs
Infineon Technologies, Germany
Title : How SiC power devices can re-shape modern power electronics
SiC based power semiconductors are meanwhile established elements in the library of engineers designing power conversion circuits. Leap frogs have been enabled in the fields of efficiency and power density. Beyond the classical range of applications, the features delivered by the state-of-the-art solid-state components open up new areas for the utilization of semiconductor-based elements. Prominent examples are circuit breakers especially for DC based networks and solid-state transformers which eventually leave their status of being just an academic passion. The tutorial will give an overview about the major historic and current application for power devices based on silicon carbide.
Shinsuke Harada
National Institute of Advanced Industrial Science and Technology, Japan
Title : Next-Generation SiC Power Devices (Tentative)
TBA
TBA
Title : Advanced SiC Power Modules and Applications (Tentative)