Title : From Wafer to Inverter ; The MIRISE Power Device Journey
Short biography of Yoshifumi Kato
Yoshifumi Kato joined NIPPONDENSO CORPORATION (currently DENSO CORPORATION) in 1985. He was promoted to Senior Executive Officer, Chief of Engineering Research & Development Center in 2017. He appointed President and CEO of MIRISE Technologies Co., Ltd. (concurrent post) in 2020, Senior Executive Officer, Chief Technology Officer (CTO) in 2021, and Mission Executive in 2025.
PL-2
Michael Krieger Friedrich-Alexander-Universität Erlangen-Nürnberg
Title : Point Defects in Silicon Carbide (tentative)
Short biography of Michael Krieger
Michael Krieger's research has always focused on characterizing defects in silicon carbide. He has been actively involved in the ICSCRM conference series for many years, serving on various committees, and chaired the international steering committee from 2023 to 2024. He is also an expert in F.A.I.R. research data management and one of the leading scientists in the German National Research Data Infrastructure consortium FAIRmat.
PL-3
Rajib Datta GE Vernova Advanced Research Center
Title : Emerging Applications of Silicon Carbide Power Devices in Medium Voltage Power Conversion (Tentative)
Short biography of Rajib Datta
Rajib Datta is currently the Chief Engineer at GE Vernova's Advanced Research Center in Niskayuna, New York. He started his career as a Research Scientist at ABB Corporate Research, Heidelberg, Germany after finishing his Ph.D. from Indian Institute of Science, Bangalore, India in 2000. He joined GE Global Research Center, Schenectady, NY, USA, in 2002 and held various positions, including Manager of the Power Electronics Lab and Technology Leader for SiC applications. In between, he taught power electronics at Arizona State University, Tempe, AZ, USA, and worked with a start-up in electric aviation.
He led several technology development programs within GE with global teams in the area of medium voltage and high power electronics. He has 50 patents in the area of power conversion, and has authored more than 35 publications in international conferences and journals. His research interests include high voltage and medium voltage DC applications, datacenter architectures, integration of renewables, converter controls, and application of wide-bandgap power devices. He is a Fellow of IEEE.
PL-4
Yasunori Tanaka National Institute of Advanced Industrial Science and Technology
Title : Pioneering Next-Generation Power Devices at AIST (Tentative)
Short biography of Yasunori Tanaka
Yasunori Tanaka received his Ph.D. in Electronic Engineering from Osaka University in 1996. In the same year, he joined the Electrotechnical Laboratory (ETL), where he engaged in research of SiC doping control technologies using ion implantation. In 2001, following the reorganization of ETL into the National Institute of Advanced Industrial Science and Technology (AIST), he started his work on the development of SiC power devices. From 2014, he was seconded to the Cabinet Office of Japan to promote a national project on next-generation power electronics technology development.
He returned to AIST in 2016 and has since been engaged in the management of national projects related to next-generation power electronics technologies. Since 2023, he has served as Director of the Advanced Power Electronics Research Center in AIST.
